transistor(npn) features z complimentary to s8550 z collector current: i c =0.5a marking: j3y maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 40 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 5 v i c collector current -continuous 0.5 a p c collector dissipation 0.3 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 100 a, i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 25 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 5 v collector cut-off current i cbo v cb =40 v , i e =0 0.1 a collector cut-off current i ceo v cb =20v , i e =0 0.1 a emitter cut-off current i ebo v eb = 5v , i c =0 0.1 a h fe(1) v ce =1v, i c = 50ma 120 350 dc current gain h fe(2) v ce =1v, i c = 500ma 50 collector-emitter saturation voltage v ce (sat) i c =500 ma, i b = 50ma 0.6 v base-emitter saturation voltage v be (sat) i c =500 ma, i b = 50ma 1.2 v transition frequency f t v ce =6v, i c = 20ma f= 30mhz 150 mhz classification of h fe(1) rank l h range 120-200 200-350 so t -23 1. base 2. emitter 3. collector s8 050 1 date:2011/05 www.htsemi.com semiconductor jinyu
s8 050 2 date:2011/05 www.htsemi.com semiconductor jinyu
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